Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC package has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Features

• Channel Polarity: N-Channel
• Max. Continuous Drain Current, VGS @ 10V (@Tc=25°C): 3.8A
• Max. Pulsed Drain Current: 30A
• Max. Power Dissipation: 2.1W
• Max. Static Drain-to-Source On-Resistance (VGS = 10V, ID = 3.8A): 40mΩ
• Min. Drain-to-Source Breakdown Voltage: 55V
• Gate Threshold Voltage: (Min)1V , (Max)2V
• Turn-On Delay Time: 6.2ns
• Rise Time:12ns
• Turn-Off Delay Time: 35ns
• Fall Time: 22ns
• Package: SOT-223