Description

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

• Channel Polarity: N-Channel
• Max. Continuous Drain Current: 500mA
• Max. Pulsed Drain Current: 1200mA
• Max. Power Dissipation: 830mW
• Max. Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 200 mA ): 5Ω (Typ=1.2Ω)
• Min. Drain-to-Source Breakdown Voltage: 60V
• Gate Threshold Voltage: (Min)0.8V, (Max)3V
• Turn-On Time: 10ns
• Turn-Off Time: 10ns
• Package: TO-92