Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811WPbF has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811WPbF offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application

Features

• Channel Polarity: N-channel
• Max. Continuous Drain Current @Ta=25°C: 14A
• Max. Pulsed Drain Current: 109A
• Max. Power Dissipation: 3.1W
• Max. Static Drain-to-Source On-Resistance: 12mΩ
• Min. Drain-to-Source Breakdown Voltage: 30V
• Turn-on Delay Time: 11ns
• Rise Time: 11ns
• Turn-off Delay Time: 29ns
• Fall Time: 9.9ns
• Package: SO-8 (SOP-8)