Description
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features
Max. Continuous Drain Current (@Tc=25°C): 202A
Max. Pulsed Drain Current: 808A
Max. Power Dissipation: 333W
Max. Static Drain-to-Source On-Resistance: 4mΩ
Min. Drain-to-Source Breakdown Voltage: 40V
Gate Threshold Voltage: (Min)2V, (Max)4V
Turn-On Delay Time: 17ns
Rise Time: 190ns
Turn-Off Delay Time: 46ns
Fall Time: 33ns