Description

Fifth Generation HEXFETÆ power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Ratings

• Continuous Drain Current, VGS @ 10V: 17A
• Pulsed Drain Current: 68A
• Power Dissipation: 45W
• Min. Drain-to-Source Breakdown Voltage: 55V
• Min. Static Drain-to-Source On-Resistance: 70mΩ
• Gate Threshold Voltage: (Min.) 2V , (Max.)4V
• Package: TO-220AB