Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Features

• Channel Polarity: P-Channel
• Max. Continuous Drain Current, VGS @ -10V (@Tc=25°C): -3A
• Max. Pulsed Drain Current: -24A
• Max. Power Dissipation: 1.25W
• Max. Static Drain-to-Source On-Resistance (VGS = -10V, ID = -3A): 98mΩ
• Min. Drain-to-Source Breakdown Voltage: -30
• Gate Threshold Voltage: (Min)-1V , (Max)-2.5V
• Turn-On Delay Time: 12ns
• Rise Time: 18ns
• Turn-Off Delay Time: 88ns
• Fall Time: 52ns
• Package: SOT-23