Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

• Channel Polarity: N-Channel
• Max. Continuous Drain Current, VGS @ 10V (@Tc=25°C): 10A
• Max. Pulsed Drain Current: 35A
• Max. Power Dissipation: 48W
• Max. Static Drain-to-Source On-Resistance (VGS = 10V, ID = 6.0A): 185mΩ
• Min. Drain-to-Source Breakdown Voltage: 100V
• Gate Threshold Voltage: (Min)1V , (Max)2V
• Turn-On Delay Time: 4ns
• Rise Time:35ns
• Turn-Off Delay Time: 23ns
• Fall Time: 22ns
• Package: D-Pack (TO-252)