Description

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a
remarkable manufacturing reproducibility.

Features

• Channel Polarity: N-Channel
• Max. Drain-source voltage: 100V
• Max. Gate- source voltage: ±20V
• Max. Drain current (continuous) at TC = 25°C: 35A
• Max. Drain current (pulsed): 140A
• Max. Total dissipation at TC = 25°C: 115W
• Operating junction temperature: -55 to 175°C
• Gate threshold voltage (Typ.): 3V
• Static drain-source on resistance (Typ.): 38mΩ
• Turn-on delay time: 15ns
• Rise time: 40ns
• Turn-off delay time: 45ns
• Fall time: 10ns
• Package: TO-220